Infineon IPB083N10N3G: 100V OptiMOS 5 Power MOSFET for High-Efficiency Power Conversion
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this challenge, the Infineon IPB083N10N3G stands out as a premier 100V N-channel Power MOSFET built on the advanced OptiMOS™ 5 technology platform. This device is engineered to deliver exceptional performance in a wide array of power conversion applications, from industrial motor drives and telecom power supplies to synchronous rectification in switch-mode power supplies (SMPS).
A key metric for any power MOSFET is its on-state resistance, RDS(on). The IPB083N10N3G offers an impressively low typical RDS(on) of just 0.83 mΩ at 10 V. This ultra-low resistance is fundamental to minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Designers can achieve more compact form factors by requiring less cooling, thereby increasing overall power density.
Beyond static performance, the switching characteristics are equally critical. The OptiMOS 5 technology ensures superior switching performance with low gate charge (QG) and outstanding figure-of-merit (FOM). This combination allows for faster switching frequencies, which enables the use of smaller passive components like inductors and capacitors. Consequently, systems can operate at higher frequencies without a significant penalty in switching losses, leading to more efficient and smaller power solutions.
The device is offered in the robust Infineon’s proprietary SuperSO8 package (PG-TDSON-8), which provides excellent thermal and electrical properties. This package features a exposed die pad that offers a very low thermal resistance, facilitating efficient heat dissipation away from the silicon die. This robust thermal capability ensures reliable operation even under demanding conditions, enhancing the long-term reliability of the end product.
Furthermore, the 100V voltage rating makes the IPB083N10N3G an ideal choice for applications operating from 48 V bus systems, which are common in data communications, telecommunications, and industrial environments. It provides a comfortable safety margin, ensuring robust operation against voltage spikes and transients.
The Infineon IPB083N10N3G is a benchmark 100V MOSFET that combines ultra-low RDS(on), fast switching speed, and excellent thermal performance in a compact package. It is a top-tier solution for engineers aiming to maximize efficiency and power density in their next-generation power conversion designs.
Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Density, SuperSO8
