Infineon IRFH7084TRPBF: High-Performance Power MOSFET for Advanced Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced applications, from high-frequency DC-DC converters to powerful motor drives, lies the power MOSFET. The Infineon IRFH7084TRPBF stands out as a premier component engineered to meet these rigorous challenges, delivering exceptional performance and reliability.

This MOSFET is constructed using Infineon's advanced OptiMOS™ technology, a platform renowned for its excellent figures of merit. The IRFH7084TRPBF is characterized by its exceptionally low on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for smaller heatsinks. This makes it an ideal candidate for power-intensive applications where thermal management is a critical concern.

Furthermore, the device boasts a low gate charge (QG) and outstanding switching performance. The minimized gate charge allows for faster switching speeds and reduces the driving requirements, enabling designers to use smaller, more efficient gate driver ICs. This fast switching capability is essential for high-frequency operation in switch-mode power supplies (SMPS), allowing for the use of smaller inductive and capacitive components, thereby increasing overall power density.

Housed in a robust PQFN 5x6 mm package, the IRFH7084TRPBF offers an excellent power-to-size ratio. The package features an exposed top-side cooling pad that provides superior thermal dissipation by transferring heat directly away from the silicon die to the PCB, effectively lowering the junction temperature during operation. This package technology is crucial for maintaining performance and reliability in space-constrained applications.

With a high maximum drain current (ID) of 144 A and a drain-source voltage (VDSS) rating of 40 V, this MOSFET is perfectly suited for a broad range of demanding applications. These include:

Synchronous rectification in server and telecom power supplies.

High-current DC-DC converters in computing and networking equipment.

Motor control and drives for industrial automation and robotics.

Battery management systems (BMS) and protection circuits.

ICGOOODFIND: The Infineon IRFH7084TRPBF is a top-tier power MOSFET that excels in performance, efficiency, and thermal management. Its combination of ultra-low RDS(on), fast switching characteristics, and robust packaging makes it an indispensable component for designers aiming to push the boundaries of power conversion technology in advanced switching applications.

Keywords: OptiMOS™, Low RDS(on), High Switching Speed, PQFN Package, Power Efficiency.