Infineon BSS84PWH6327XTSA1 P-Channel MOSFET: Datasheet, Pinout, and Application Circuits
The Infineon BSS84PWH6327XTSA1 is a popular P-Channel enhancement mode MOSFET housed in a compact SOT-323 surface-mount package. Designed for low-voltage, low-power applications, this MOSFET is a cornerstone component for power management and switching tasks in modern electronic design, prized for its high efficiency and small form factor.
Datasheet Overview and Key Specifications
The device is characterized by its low threshold voltage, typically around -1V, making it highly compatible with 3.3V and 5V logic-level control from microcontrollers and other digital ICs. Key absolute maximum ratings from its datasheet include a drain-source voltage (VDS) of -60V and a continuous drain current (ID) of -130mA. Its standout feature is an exceptionally low on-resistance (RDS(on)) of just 10.5 Ω max at VGS = -10V, which minimizes power loss and voltage drop across the switch, leading to cooler operation and higher overall system efficiency.
Pinout Configuration
The pinout for the SOT-323 package is standard for three-terminal devices:
Pin 1 (Source 1): This pin is internally connected to the device's substrate and is the source terminal.
Pin 2 (Gate): The control pin. Applying a voltage relative to the source turns the channel on or off.
Pin 3 (Drain): The output terminal; current flows out of this pin when the MOSFET is active.
It is critical to note that in a P-Channel MOSFET, the source is connected to the higher voltage potential, and the drain is connected to the lower voltage load.
Application Circuits
The BSS84PWH6327XTSA1 excels in a variety of low-side and high-side switching applications.
1. High-Side Load Switching: The most common use case is switching a load connected to ground (GND). A microcontroller GPIO pin can directly drive the gate. To turn the load OFF, the GPIO is set to a high logic level (e.g., 3.3V), making VGS ~0V. To turn the load ON, the GPIO is set to low (0V), creating a VGS of -3.3V, which is sufficient to fully enhance the MOSFET channel.
2. Power Rail Sequencing: Multiple BSS84 devices can be used to sequence the power-up and power-down order of different voltage rails in a system, preventing latch-up conditions in complex ICs.
3. Reverse Polarity Protection: A simple and effective circuit can be built using a P-Channel MOSFET to protect a system from accidental reverse connection of the power supply. The MOSFET is placed in series with the positive rail. Under correct polarity, the intrinsic body diode becomes forward-biased, allowing current to flow and triggering the gate to turn the MOSFET fully on. Under reverse polarity, the device remains off, safeguarding downstream components.
Design Considerations:
When implementing this MOSFET, designers must consider:
Gate Protection: A series resistor (e.g., 10Ω-100Ω) is often used at the gate to dampen ringing and prevent oscillations caused by parasitic inductance.
Gate-Source Pull-Up Resistor: A high-value resistor (e.g., 10kΩ-100kΩ) connected from the source to the gate is essential to ensure the MOSFET turns off reliably by pulling the gate high if the driving pin is in a high-impedance state.
Voltage Limitations: Ensure the gate-source voltage (VGS) does not exceed the maximum rating of ±12V, as this can permanently damage the oxide layer.
ICGOODFIND: For engineers and procurement specialists, the Infineon BSS84PWH6327XTSA1 represents an optimal blend of performance, reliability, and miniaturization for space-constrained, low-power designs. Its robust specifications and logic-level compatibility make it a versatile and go-to solution for a vast array of modern electronic applications, from portable consumer devices to industrial control systems.
Keywords: P-Channel MOSFET, Logic Level, Low On-Resistance, Load Switch, SOT-323.
