Infineon IRF6614TRPBF: A Benchmark in 30V Dual N-Channel MOSFET Performance

The relentless drive for higher power density and efficiency in modern electronics, from advanced computing to compact power supplies, demands semiconductor components that deliver exceptional performance in minimal space. Addressing this challenge head-on, the Infineon IRF6614TRPBF stands out as a premier 30V dual N-channel MOSFET housed in the innovative PowerPAK® 1212-8 package.

This device is engineered for applications where board space is at an absolute premium. The PowerPAK® 1212-8 package measures a mere 1.2mm x 1.2mm, making it one of the smallest in the industry. Despite its minuscule footprint, it does not compromise on power handling or thermal performance. The package's advanced construction allows for superior heat dissipation, which is critical for maintaining reliability and efficiency under high-load conditions.

The core electrical characteristics of the IRF6614TRPBF are equally impressive. With a maximum continuous drain current (Id) of 21.5A, this MOSFET is capable of handling significant power for its size. Its key advantage lies in its exceptionally low on-state resistance (Rds(on)), which is as low as 2.0 mΩ at a 10V gate drive. This ultra-low Rds(on) is a critical factor in minimizing conduction losses, directly translating to higher system efficiency, reduced heat generation, and improved overall energy savings.

Furthermore, the device is characterized by low gate charge (Qg). This feature enables faster switching speeds, which is essential for high-frequency switching regulators and converters. Faster switching reduces switching losses, another major contributor to inefficiency in power management circuits. The combination of low Rds(on) and low Qg makes the IRF6614TRPBF an ideal choice for demanding applications such as:

Synchronous rectification in DC-DC converters for servers and telecom equipment.

Load switching in notebooks, desktops, and graphics cards.

Power Management Integrated Circuits (PMICs) in space-constrained consumer electronics.

In conclusion, the Infineon IRF6614TRPBF represents a significant achievement in MOSFET design, offering a powerful blend of miniaturization, efficiency, and thermal performance. Its deployment allows power design engineers to push the boundaries of what is possible in next-generation electronic devices.

ICGOODFIND: The Infineon IRF6614TRPBF is a top-tier solution for high-density power design, masterfully balancing a minuscule PowerPAK® 1212-8 footprint with robust 21.5A current handling, ultra-low 2.0 mΩ Rds(on), and fast switching capabilities to maximize efficiency in the most demanding applications.

Keywords: PowerPAK 1212-8, Low Rds(on), High-Current MOSFET, Synchronous Rectification, Power Density.