Infineon IPD031N03L G: High-Performance 30V Single N-Channel HEXFET Power MOSFET in SuperSO8 Package

In the realm of power electronics, efficiency, thermal performance, and space savings are paramount. The Infineon IPD031N03L G, a 30V single N-channel MOSFET in the advanced SuperSO8 package, stands out as a superior solution designed to meet these demanding requirements. This device leverages Infineon's proven HEXFET technology and innovative packaging to deliver exceptional performance in a compact form factor.

A key highlight of the IPD031N03L G is its remarkably low on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is crucial for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in applications such as synchronous rectification in DC-DC converters and motor control circuits. The low gate charge (QG) of 18 nC further enhances its efficiency by enabling very fast switching speeds, which is essential for high-frequency switch-mode power supplies (SMPS) where switching losses are a major concern.

The choice of the SuperSO8 (SSO-8) package is a significant advantage. While occupying a similar PCB footprint as a standard SO-8, its thinner profile and exposed pad (EP) technology provide a vastly superior thermal path. This design allows for highly efficient heat dissipation away from the silicon die, enabling the MOSFET to handle a continuous drain current (ID) of up to 70 A and survive significant pulse currents. This robust thermal performance allows designers to either maximize the power output of their systems or reduce the size of heatsinks, contributing to further miniaturization.

Furthermore, the device is characterized by its low thermal resistance and is qualified according to the highest quality standards, ensuring reliability and longevity in end products. Its optimized Avalanche Ruggedness also makes it a robust choice for applications prone to voltage spikes and inductive switching.

Typical applications where the IPD031N03L G excels include:

High-frequency DC-DC conversion (e.g., VRMs, POL converters)

Synchronous rectification in SMPS

Motor drives and control circuits

Battery management systems (BMS)

Active load switching in automotive and industrial systems

ICGOOODFIND: The Infineon IPD031N03L G is a top-tier power MOSFET that masterfully combines ultra-low RDS(on), fast switching capability, and outstanding thermal performance in the space-efficient SuperSO8 package. It is an ideal component for designers seeking to push the limits of power density and efficiency in modern electronic systems.

Keywords: Low RDS(on), SuperSO8 Package, HEXFET Technology, High Efficiency, Power Density