Infineon IHW40N135R5: A 1350V 40A Si IGBT with Reverse Conducting Capability
The evolution of power semiconductor technology continues to address the growing demands for higher efficiency, power density, and reliability in applications ranging from industrial motor drives and renewable energy systems to uninterruptible power supplies (UPS). A significant innovation in this field is the Reverse Conducting IGBT (RC-IGBT), which combines the conventional IGBT and a freewheeling diode into a single silicon chip. The Infineon IHW40N135R5 stands as a prime example of this advanced technology, engineered to deliver robust performance in high-voltage circuits.
At its core, the IHW40N135R5 is a 1350V, 40A silicon-based RC-IGBT. The high voltage rating makes it exceptionally suitable for systems operating directly from three-phase mains or in high-power converters where voltage spikes are common. Its integrated reverse conducting capability is its most defining feature. Unlike a standard IGBT that requires an external anti-parallel diode for reverse current flow, this device inherently allows reverse conduction. This integration eliminates the need for a separate diode, leading to a more compact module design, reduced parasitic inductance, and ultimately, a simplification of the overall system architecture.
The benefits of this monolithic integration are substantial. By combining two devices into one, the package size and the number of interconnections within a power module are significantly reduced. This directly enhances the power density of the final application, a critical factor for modern, space-constrained designs. Furthermore, the co-packaging minimizes parasitic effects, which can contribute to lower switching losses and reduced electromagnetic interference (EMI). This allows for the potential to increase the switching frequency, which can lead to the use of smaller passive components like inductors and capacitors.
From a performance perspective, the IHW40N135R5 is designed for high efficiency. It features low saturation voltage (VCE(sat)), which translates to reduced conduction losses during the on-state operation. Its ruggedness is ensured by a wide reverse bias safe operating area (RBSOA) and short-circuit capability, providing designers with a high level of operational reliability and robustness in demanding environments. This makes it an excellent choice for hard-switching topologies commonly found in high-power inverters.
ICGOOODFIND: The Infineon IHW40N135R5 RC-IGBT represents a significant step forward in power device integration. Its high-voltage rating, substantial current handling, and built-in reverse conduction function make it a superior solution for enhancing power density, simplifying design, and improving overall system efficiency in next-generation high-power applications.
Keywords: RC-IGBT, Reverse Conducting, High Power Density, 1350V, System Integration.
