Infineon IPG20N04S4-08B OptiMOS 5 Power MOSFET: Key Features and Applications

The Infineon IPG20N04S4-08B is a state-of-the-art Power MOSFET from the renowned OptiMOS™ 5 technology family. Engineered for exceptional efficiency and robustness, this N-channel MOSFET is designed to meet the demanding requirements of modern power conversion systems. Its advanced features make it a preferred choice for a wide array of applications, from automotive systems to industrial motor drives.

A standout feature of this MOSFET is its extremely low typical on-state resistance (RDS(on)) of just 0.8 mΩ at a gate-source voltage of 10 V. This remarkably low resistance is pivotal in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation. This allows for more compact designs by reducing the need for large heat sinks and cooling systems.

Complementing its low RDS(on) is its high current handling capability, supporting a continuous drain current (ID) of up to 200 A. This high current capacity makes it suitable for high-power applications where managing significant power levels is critical. Furthermore, the device is characterized by outstanding switching performance, which helps to lower switching losses significantly. This is particularly beneficial in high-frequency circuits, enabling designers to increase switching frequencies and, consequently, reduce the size of passive components like inductors and capacitors.

The component is housed in an advanced, space-saving PG-TO263-7 (D2PAK-7) package. This package offers an excellent trade-off between size and thermal performance, providing a low thermal resistance path to efficiently dissipate heat from the die. Its high power density is ideal for applications where board space is at a premium.

Applications

The combination of high efficiency, high current capability, and robust switching performance opens the door to numerous applications. Key uses include:

Automotive Systems: It is an excellent fit for high-efficiency DC-DC converters in electric and hybrid vehicles, battery management systems (BMS), and electronic power steering (EPS).

Industrial Power Tools: The MOSFET’s ability to handle high currents and its robustness make it perfect for driving motors in industrial drills, saws, and other heavy-duty equipment.

Server and Telecom Power Supplies: Its low losses are crucial for achieving high efficiency in power supply units (PSUs) for data centers and telecommunications infrastructure, helping to reduce operational costs and energy consumption.

Solar Inverters: The device can be used in maximum power point tracking (MPPT) and inverter stages to maximize energy harvest and conversion efficiency.

ICGOOODFIND: The Infineon IPG20N04S4-08B OptiMOS™ 5 MOSFET sets a high benchmark for power semiconductor devices, delivering a powerful combination of minimal conduction losses, superior switching performance, and high power density that is essential for the next generation of efficient and compact electronic systems.

Keywords: Low RDS(on), High Current Capability, OptiMOS™ 5 Technology, High-Efficiency Power Conversion, Automotive Applications.