Infineon SPB21N50C3 500V N-Channel Power MOSFET for High-Efficiency Switching Applications

The demand for high-efficiency power conversion systems continues to grow across industries such as industrial motor drives, renewable energy inverters, and high-performance computing. Central to these systems is the power MOSFET, a critical component that determines overall efficiency, thermal performance, and reliability. The Infineon SPB21N50C3, a 500V N-Channel MOSFET, stands out as a superior solution tailored for high-efficiency switching applications.

Built on Infineon’s advanced CoolMOS™ C3 superjunction technology, the SPB21N50C3 offers an exceptional balance of low on-state resistance and high switching performance. With a low RDS(on) of just 0.19 Ω, this device minimizes conduction losses, enabling higher efficiency even under high-load conditions. The reduced power dissipation translates into lower operating temperatures, enhancing system longevity and reliability.

Another key advantage of the SPB21N50C3 is its excellent switching characteristics. The device features low gate charge (Qg) and low output capacitance (Coss), which contribute to reduced switching losses and allow for higher frequency operation. This makes it particularly suitable for switch-mode power supplies (SMPS), power factor correction (PFC) stages, and DC-DC converters where fast switching is essential for compact and efficient designs.

The MOSFET’s 500V drain-source voltage rating provides ample margin for operation in off-line power supplies and other high-voltage applications, ensuring robust performance against voltage spikes and transients. Additionally, the device offers high avalanche ruggedness, which improves system reliability in harsh environments.

Thermal management is further enhanced thanks to the low thermal resistance of the TO-220FP package, facilitating effective heat dissipation. Engineers can design more compact systems without compromising thermal performance, making the SPB21N50C3 an ideal choice for space-constrained applications.

In summary, the Infineon SPB21N50C3 combines high voltage capability, low losses, and superior switching performance to meet the demands of modern power electronics.

ICGOOODFIND

The Infineon SPB21N50C3 is an outstanding high-voltage MOSFET that delivers high efficiency, thermal robustness, and reliability—making it a top choice for advanced power switching systems.

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Keywords:

CoolMOS™ C3, Low RDS(on), High Switching Performance, 500V MOSFET, Power Efficiency