Infineon BSC019N04NS 40V N-Channel MOSFET for High-Efficiency Power Conversion

Release date:2025-11-10 Number of clicks:116

Infineon BSC019N04NS 40V N-Channel MOSFET for High-Efficiency Power Conversion

The demand for higher efficiency and greater power density in modern electronic systems continues to drive innovation in power semiconductor technology. Among the key components enabling these advancements is the Infineon BSC019N04NS, a 40V N-Channel MOSFET designed to meet the rigorous requirements of high-efficiency power conversion applications.

Built using Infineon’s advanced OptiMOS™ technology, this MOSFET offers an exceptional combination of low on-state resistance (RDS(on)) and high switching performance. With a maximum RDS(on) of just 1.9 mΩ at 10 V, the BSC019N04NS significantly reduces conduction losses, making it particularly suitable for high-current applications such as DC-DC converters, motor drives, and synchronous rectification in switched-mode power supplies (SMPS).

The device’s low gate charge (Qg) and ultra-low figure of merit (RDS(on) × Qg) ensure minimal switching losses, allowing for higher frequency operation. This is critical in applications where efficiency and thermal management are paramount. Moreover, the BSC019N04NS is characterized by its high robustness and reliability, featuring a strong avalanche capability and excellent thermal performance, which contribute to longer system lifespan and reduced cooling requirements.

The MOSFET’s 40V voltage rating makes it well-suited for use in industrial power tools, automotive systems, and server power supplies, where operating conditions can be demanding. Its compact SuperSO8 package also aids in achieving higher power density, enabling designers to create more compact and efficient power solutions without compromising performance.

In summary, the Infineon BSC019N04NS sets a high standard for power MOSFETs by delivering superior efficiency, thermal behavior, and switching characteristics—all essential for next-generation power conversion systems.

ICGOOODFIND:

The Infineon BSC019N04NS exemplifies how advanced MOSFET technology can enhance power conversion efficiency through reduced losses and improved thermal performance, making it a top choice for high-performance applications.

Keywords:

Power Conversion, Low RDS(on), OptiMOS™, Switching Performance, Synchronous Rectification

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